The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Jan. 05, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Xuelian Zhu, San Jose, CA (US);
Jia Zeng, Sunnyvale, CA (US);
Wenhui Wang, San Jose, CA (US);
Youngtag Woo, San Ramon, CA (US);
Jongwook Kye, Pleasanton, CA (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/535 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 29/0642 (2013.01); H01L 29/4175 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to contacts for local connections and methods of manufacture. The structure includes: at least one contact electrically shorted to a gate structure and a source/drain contact and located below a first wiring layer; and gate, source and drain contacts extending from selected gate structures and electrically connecting to the first wiring layer.