The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jan. 08, 2015
Applicant:

Dnf Co.,ltd., Daejeon, KR;

Inventors:

Se Jin Jang, Daegu, KR;

Sang-Do Lee, Daejeon, KR;

Jong Hyun Kim, Daejeon, KR;

Sung Gi Kim, Daejeon, KR;

Do Yeon Kim, Gyeongsangbuk-do, KR;

Byeong-il Yang, Daejeon, KR;

Jang Hyeon Seok, Daejeon, KR;

Sang Ick Lee, Daejeon, KR;

Myong Woon Kim, Daejeon, KR;

Assignee:

DNF CO.,LTD., Daejeon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C07F 7/10 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C07F 7/10 (2013.01); C23C 16/402 (2013.01); C23C 16/45536 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01);
Abstract

Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.


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