The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2019

Filed:

Jul. 14, 2015
Applicant:

Thin Film Electronics Asa, Oslo, NO;

Inventors:

Yuichi Goto, Toyama, JP;

Kentaro Nagai, Toyama, JP;

Masahisa Endo, Toyama, JP;

Gun Son, Toyama, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/04 (2006.01);
U.S. Cl.
CPC ...
C01B 33/04 (2013.01);
Abstract

A cyclic silane having high purity, a composition containing a polysilane obtained by polymerization of the cyclic silane, and a silicon thin film are disclosed. A method for producing a cyclic silane of the formula (SiH), where n is an integer of 4 to 6, includes reacting a cyclic silane compound of the formula (SiRR)(where Rand Rare each a hydrogen atom, a Calkyl group, or a substituted or unsubstituted phenyl group) with a hydrogen halide in the presence of an aluminum halide to obtain a cyclic silane of the formula (SiRR)(where Rand Rare each a halogen atom), and then distilling the solution, and reducing the cyclic silane of the formula (SiRR)with hydrogen or lithium aluminum hydride. The distillation may be carried out at a temperature of 40° C. to 80° C. under a reduced pressure of 0 to 30 Torr.


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