The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Aug. 10, 2017
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Hussain H. Ladhani, Tempe, AZ (US);

Gerard J. Bouisse, Toulouse, FR;

Jeffrey K. Jones, Chandler, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/32 (2006.01); H03F 1/02 (2006.01); H03F 1/56 (2006.01); H03F 3/193 (2006.01); H03F 3/26 (2006.01); H03F 3/21 (2006.01); H03F 1/42 (2006.01);
U.S. Cl.
CPC ...
H03F 1/3205 (2013.01); H03F 1/0211 (2013.01); H03F 1/0288 (2013.01); H03F 1/3247 (2013.01); H03F 1/42 (2013.01); H03F 1/565 (2013.01); H03F 3/193 (2013.01); H03F 3/21 (2013.01); H03F 3/211 (2013.01); H03F 3/265 (2013.01); H03F 3/04 (2013.01); H03F 2200/225 (2013.01); H03F 2200/391 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21106 (2013.01);
Abstract

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.


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