The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Aug. 01, 2016
Siliconware Precision Industries Co., Ltd., Taichung, TW;
Fang-Yu Liang, Taichung, TW;
Hung-Hsien Chang, Taichung, TW;
Yi-Che Lai, Taichung, TW;
Wen-Tsung Tseng, Taichung, TW;
Chen-Yu Huang, Taichung, TW;
Siliconware Precision Industries Co., Ltd., Taichung, TW;
Abstract
Provided is a substrate structure, including: a substrate body having a conductive contact; an insulating layer formed on the substrate body with the conductive contact exposed therefrom; and an insulating protection layer formed on a portion of a surface of the insulating layer, and having a plurality of openings corresponding to the conductive contact, wherein at least one of the openings is disposed at an outer periphery of the conductive contact. Accordingly, the insulating protection layer uses the openings to dissipate and disperse residual stresses in a manufacturing process of high operating temperatures.