The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Dec. 20, 2016
United Microelectronics Corp., Hsinchu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Fujian province, CN;
Chieh-Te Chen, Kaohsiung, TW;
Hsien-Shih Chu, Kaohsiung, TW;
Ming-Feng Kuo, Tainan, TW;
Fu-Che Lee, Taichung, TW;
Chien-Ting Ho, Taichung, TW;
Chiung-Lin Hsu, Tainan, TW;
Feng-Yi Chang, Tainan, TW;
Yi-Wang Zhan, Taichung, TW;
Li-Chiang Chen, Tainan, TW;
Chien-Cheng Tsai, Kaohsiung, TW;
Chin-Hsin Chiu, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Fujian Jianhua Integrated Circuit Co., Ltd., Fujian Province, CN;
Abstract
A method of fabricating an isolation structure is provided. A first oxide layer and a first, second, and third hard mask layers are formed on a substrate. A patterned third hard mask layer is formed. Second oxide layers are formed on sidewalls of the patterned third hard mask layer and a fourth hard mask layer is formed between the second oxide layers. The second oxide layers and the second hard mask layer are removed using the patterned third hard mask layer and the fourth hard mask layer as a mask, to form a patterned second hard mask layer. The patterned third hard mask layer and the fourth hard mask layer are removed. A portion of the patterned second hard mask layer is removed to form trench patterns. A patterned first hard mask layer and first oxide layer, and trenches located in the substrate are defined. An isolation material is formed.