The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Jan. 18, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Hui-Jung Wu, Pleasanton, CA (US);

Thomas Joseph Knisley, Beaverton, OR (US);

Nagraj Shankar, Tualatin, OR (US);

Meihua Shen, Fremont, CA (US);

John Hoang, Fremont, CA (US);

Prithu Sharma, Santa Clara, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01J 37/32 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/16 (2006.01); C23C 16/54 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); C23C 16/0245 (2013.01); C23C 16/0272 (2013.01); C23C 16/045 (2013.01); C23C 16/16 (2013.01); C23C 16/54 (2013.01); H01J 37/32357 (2013.01); H01L 21/02126 (2013.01); H01L 21/02274 (2013.01); H01L 21/32138 (2013.01); H01L 21/76834 (2013.01); H01L 21/76852 (2013.01); H01L 21/76885 (2013.01); H01L 23/53238 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01); H01L 21/7682 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.


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