The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Jul. 22, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Zhigang Mao, San Jose, CA (US);
Xiaoyi Chen, Foster City, CA (US);
Amitabh Sabharwal, San Jose, CA (US);
Ajay Kumar, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl, Oand at least one hydrocarbon gas in to a processing chamber, wherein the Cland Ois supplied at a Cl:Oratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.