The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2019

Filed:

Oct. 06, 2015
Applicant:

Dic Corporation, Tokyo, JP;

Inventors:

Takeshi Ibe, Chiba, JP;

Naoto Yagi, Chiba, JP;

Hisashi Tanimoto, Chiba, JP;

Makoto Yada, Chiba, JP;

Assignee:

DIC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/075 (2006.01); C07F 7/18 (2006.01); C08F 30/08 (2006.01); C08F 290/00 (2006.01); C08F 299/08 (2006.01); H01L 21/027 (2006.01); C08F 290/08 (2006.01); C07F 7/21 (2006.01); C08G 77/38 (2006.01); G03F 7/00 (2006.01); G03F 7/027 (2006.01); C08G 77/20 (2006.01); C08G 77/22 (2006.01); C08G 77/26 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0755 (2013.01); C07F 7/18 (2013.01); C07F 7/21 (2013.01); C08F 30/08 (2013.01); C08F 290/00 (2013.01); C08F 290/08 (2013.01); C08F 299/08 (2013.01); C08G 77/38 (2013.01); G03F 7/0002 (2013.01); G03F 7/027 (2013.01); H01L 21/027 (2013.01); C08G 77/20 (2013.01); C08G 77/22 (2013.01); C08G 77/26 (2013.01);
Abstract

A problem of The present invention is to provide a curable composition capable of forming a resist which can be easily washed after curing and which has high dry etching resistance and excellent precision of fine pattern transfer, also provide a resist film and a laminate each containing the curable composition, and further provide a pattern forming method using the resist film. The problem of the present invention can be solved by providing a curable composition containing a multifunctional polymerizable monomer (A) which has two or more groups having a polymerizable group and has at least one group Q having a polymerizable group represented by formula (1) below, the amount of silicon atoms in an nonvolatile content being 10 wt % or more.


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