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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192999 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Dec. 22, 2017

Vertical memory cell with non-self-aligned floating drain-source implant

Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Marc Mantelli, Fuveau, FR;

Stephan Niel, Meylan, FR;

Arnaud Regnier, Les Taillades, FR;

Francesco La Rosa, Rousset, FR;

Julien Delalleau, Marseilles, FR;

Assignee:

STMICROELECTRONICS (ROUSSET) SAS, Rousset, FR;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Allison Bernstein

Int. Cl.
CPC ...
H01L 29/788 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2017.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 27/11553 (2017.01); G11C 16/14 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 27/11524 (2017.01); H01L 27/11521 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); G11C 16/0425 (2013.01); G11C 16/14 (2013.01); H01L 21/266 (2013.01); H01L 21/28273 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 27/11553 (2013.01); H01L 27/11556 (2013.01); H01L 29/42328 (2013.01); H01L 29/42336 (2013.01); H01L 29/66666 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract

Various embodiments provide a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of the vertical selection gate, over a non-zero overlap distance, the memory cell comprising a doped region implanted at the intersection of a vertical channel region extending opposite the selection gate and a horizontal channel region extending opposite the floating gate.

Find Patent Forward Citations

Mantelli, Marc. (2019). Vertical memory cell with non-self-aligned floating drain-source implant (U.S. Patent No. 10192999). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10192999

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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