The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Aug. 26, 2016
Applicant:
Hitachi High-technologies Corporation, Tokyo, JP;
Inventors:
Kenichi Kuwahara, Tokyo, JP;
Syuji Enokida, Tokyo, JP;
Assignee:
Hitachi High-Technologies Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/32132 (2013.01); H01L 21/32137 (2013.01); H01L 29/785 (2013.01);
Abstract
According to the present invention, a dry-etching method for performing plasma etching in a vertical profile while maintaining selectivity relative to a mask, includes: a first process of etching a film to be etched with use of reactive gas to cause an etching profile of the film to be etched to be formed in a footing profile; and a second process of, after the first process, causing the footing profile to be formed in a vertical profile by means of sputtering etching.