The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jul. 31, 2017
Globalfoundries, Inc., George Town, KY;
Ashish Kumar Jha, Saratoga Springs, NY (US);
Hui Zhan, Clifton Park, NY (US);
Hong Yu, Rexford, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Edward Reis, Ballston Spa, NY (US);
Charles Vanleuvan, East Northport, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Abstract
A shallow trench isolation (STI) structure is formed from a conventional STI trench structure formed of first dielectric material extending into the substrate. The conventional STI structure undergoes further processing, including removing a first portion of the dielectric material and adjacent portions of the semiconductor substrate to create a first recess, and then removing another portion of the dielectric material to create a second recess in just the dielectric material. A nitride layer is formed above remaining dielectric material and on the sidewalls of the substrate. A second dielectric material is formed on the spacer layer and fills the remainder of first and second recesses. The nitride layer provides an 'inner spacer' between the first insulating material and the second insulating material and also separates the substrate from the second insulating material. An isotropic Fin reveal process is performed and the STI structure assists in equalizing fin heights and increasing active S/D region area/volume.