The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2019

Filed:

Jun. 27, 2016
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70516 (2013.01); G03F 7/707 (2013.01); G03F 7/70466 (2013.01); G03F 7/70633 (2013.01); G03F 7/70683 (2013.01); G03F 9/708 (2013.01); G03F 9/7019 (2013.01);
Abstract

A method including: providing a reference substrate with a first mark pattern; providing the reference substrate with a first resist layer on the reference substrate, wherein the first resist layer has a minimal radiation dose needed for development of the first resist; using a reference patterning device to impart a radiation beam with a second mark pattern in its cross-section to form a patterned radiation beam; and exposing a target portion of the first resist layer of the reference substrate n times to said patterned radiation beam to create exposed areas in the target portion of the first resist layer in accordance with the second mark pattern that have been subjected to an accumulated radiation dose above the minimal radiation dose of the first resist layer, wherein n is an integer with a value of at least two.


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