The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Feb. 15, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
VietHa Nguyen, Yongin-si, KR;
Wookyung You, Incheon, KR;
Inoue Naoya, Seongnam-si, KR;
Hak-Sun Lee, Suwon-si, KR;
Byung-Kwon Cho, Suwon-si, KR;
Songyi Han, Hwaseong-si, KR;
Jongmin Baek, Seoul, KR;
Jiwon Kang, Seoul, KR;
Byunghee Kim, Seoul, KR;
Young-Ju Park, Hwaseong-si, KR;
Sanghoon Ahn, Goyang-si, KR;
Jiwon Yun, Hwaseong-si, KR;
Naein Lee, Seoul, KR;
YoungWoo Cho, Suwon-si, KR;
Abstract
A semiconductor device includes an interlayer insulating layer including a first insulating layer on a substrate, and a plurality of interconnections in the first insulating layer. The interlayer insulating layer includes a first region, and a second region including an air gap. The air gap is defined between a pair of the interconnections in the second region. A top surface of the first insulating layer of the first region is lower than a top surface of at least one of the interconnections in the first region.