The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2019
Filed:
Jan. 14, 2016
Air Water Inc., Chuo-ku, Sapporo-shi, Hokkaido, JP;
AIR WATER INC., , JP;
Abstract
A composite semiconductor substrate being able to improve voltage withstanding and crystalline quality is provided. A composite semiconductor substrate is equipped with an Si (silicon) substrate, an SiC (silicon carbide) layer formed on the surface of the Si substrate, an AlN (aluminum nitride) layer formed on the surface of the SiC layer, a composite layer formed on the surface of the AlN layer, and a GaN (gallium nitride) layer formed on the surface of the composite layer. The composite layer includes an AlN (aluminum nitride) layer and a GaN layer formed on the surface of the AlN layer. In at least one composite layer, the average density of C and Fe in the GaN layer is higher than the average density of C and Fe in the AlN layer.