The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Sep. 30, 2015
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Martin Poelzl, Ossiach, AT;
Georg Ehrentraut, Villach, AT;
Franz Hirler, Isen, DE;
Maximilian Roesch, St. Magdalen, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0696 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract
A semiconductor device comprises a gate electrode in a trench in a semiconductor body. The gate electrode comprises a plurality of gate segments disposed along an extension direction of the trench, the gate segments being connected to neighboring gate segments by means of connection elements. A distance between adjacent gate segments is equal to or smaller than 0.5*L, wherein L denotes a length of each of the gate segments, the length being measured along the extension direction of the trench.