The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Feb. 06, 2017
Globalfoundries Inc., Grand Cayman, KY;
Jason Eugene Stephens, Menands, NY (US);
David Michael Permana, Ballston Spa, NY (US);
Guillaume Bouche, Albany, NY (US);
Andy Wei, Kanta, CA;
Mark Zaleski, Galway, NY (US);
Anbu Selvam K M Mahalingam, Mechanicville, NY (US);
Craig Michael Child, Jr., Gansevoort, NY (US);
Roderick Alan Augur, Saratoga Springs, NY (US);
Shyam Pal, Clifton Park, NY (US);
Linus Jang, Clifton Park, NY (US);
Xiang Hu, Clifton Park, NY (US);
Akshey Sehgal, Malta, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Semiconductor devices and methods of fabricating the semiconductor devices with chamfer-less via multi-patterning are disclosed. One method includes, for instance: obtaining an intermediate semiconductor device; performing a trench etch into a portion of the intermediate semiconductor device to form a trench pattern; depositing an etching stack; performing at least one via patterning process; and forming at least one via opening into a portion of the intermediate semiconductor device. An intermediate semiconductor device is also disclosed.