The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Feb. 13, 2018
Globalfoundries Inc., Grand Cayman, KY;
Nigel Chan, Dresden, DE;
Elliot John Smith, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative device disclosed a floating gate capacitor located in and above a first region of an SOI substrate located on a first side of an isolation trench and a transistor device located in and above a second region of the SOI substrate that is on the opposite side of the isolation trench. The device also includes a control gate formed in the bulk semiconductor layer in the first region and a gate structure that extends across the isolation trench and above the first and second regions. A first portion of the gate structure is positioned above the first region and the control gate and a second portion of the gate structure is positioned above the second region, wherein the first portion of the gate structure constitutes a floating gate for the floating gate capacitor and the second portion of the gate structure constitutes a transistor gate structure for the transistor device.