The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Nov. 06, 2015
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Gauri Karve, Cohoes, NY (US);
Derrick Liu, Albany, NY (US);
Robert R. Robison, Colchester, VT (US);
Gen Tsutsui, Delmar, NY (US);
Reinaldo A. Vega, Mahopac, NY (US);
Koji Watanabe, Rensselaer, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of making a semiconductor device comprises forming a first channel region comprising a first channel region material and a second channel region comprising a second channel region material; disposing a gate dielectric on the first channel region and second channel region; depositing a work function modifying material on the gate dielectric; disposing a mask over the work function modifying material deposited on the gate dielectric disposed on the first channel region; removing the work function modifying material from the unmasked gate dielectric disposed on the second channel region; removing the mask from the work function modifying material deposited on the gate dielectric disposed on the first channel region; forming a first gate electrode on the work function modifying material deposited on the first channel region and forming a second gate electrode on the gate dielectric disposed on the second channel region.