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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10166650 B1

PDFFull Text
Date of Patent:
Jan. 01, 2019

Filed:

Jul. 27, 2016

Chemical-mechanical planarization system

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chung-Liang Cheng, Changhua, TW;

Yen-Yu Chen, Taichung, TW;

Chang-Sheng Lee, Hsin-Chu, TW;

Wei Zhang, Chupei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;

Attorney:

Cooper Legal Group, LLC

Primary Examiner:

George Nguyen

Int. Cl.
CPC ...
B24B 37/00 (2012.01); B24B 37/013 (2012.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); B24B 49/12 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
B24B 37/013 (2013.01); B24B 49/12 (2013.01); H01L 21/28088 (2013.01); H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/67075 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract

A chemical-mechanical planarization (CMP) system includes a platen, a pad, a polish head, a rotating mechanism, a light source, and a detector. The pad is disposed on the platen. The polish head is configured to hold a wafer against the pad. The rotating mechanism is configured to rotate at least one of the platen and the polish head. The light source is configured to provide incident light to an end-point layer on the wafer. The detector is configured to detect absorption of the incident light by the end-point layer.

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