The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Apr. 18, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tsung-Hsueh Yang, Taichung, TW;
Yuan-Tai Tseng, Hsinchu County, TW;
Yi-Jen Tsai, New Taipei, TW;
Shih-Chang Liu, Kaohsiung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 45/12 (2013.01); H01L 43/08 (2013.01); H01L 45/146 (2013.01);
Abstract
A memory device includes a bottom electrode, a resistance switching element, a top electrode, a spacer and a conductive feature. The resistance switching element is over the bottom electrode. The top electrode is over the resistance switching electrode. The spacer abuts the resistance switching element. The conductive feature is over the top electrode. The spacer is at least partially between the conductive feature and the top electrode.