The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Aug. 31, 2017
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Che-Liang Chung, Taoyuan, TW;
Chi-Te Huang, Taoyuan, TW;
Shich-Chang Suen, Hsinchu, TW;
Kei-Wei Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In an embodiment, a method includes: forming a gate stack on a semiconductor fin, the gate stack having gate spacers along opposing sides of the gate stack; forming source/drain regions adjacent the gate stack; recessing the gate stack to form a first recess between the gate spacers; depositing a dielectric layer over the gate stack in the first recess; forming a first metal mask over the dielectric layer and the gate stack in the first recess; etching back the dielectric layer and the gate spacers to form a dielectric mask under the first metal mask; depositing a conductive material over the first metal mask and adjacent the gate stack; and planarizing the conductive material to form contacts electrically connected to the source/drain regions, top surfaces of the contacts and the dielectric mask being level.