The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jan. 11, 2012
Anton Mauder, Kolbermoor, DE;
Hans-joachim Schulze, Taufkirchen, DE;
Philipp Seng, Munich, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor diode is provided. The semiconductor diode includes a monocrystalline silicon semiconductor body including a first semiconductor region of a first conductivity type extending to a first surface of the semiconductor body and having a first maximum doping concentration, and a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region. The semiconductor diode further includes a polycrystalline silicon semiconductor region of the first conductivity type having a second maximum doping concentration which is higher than the first maximum doping concentration and adjoining the first semiconductor region on the first surface, a first metallization arranged on the polycrystalline silicon semiconductor region and in electric contact with the polycrystalline semiconductor region, and an edge-termination structure arranged next to the first semiconductor region. Further, a method for producing a semiconductor diode is provided.