The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Jan. 07, 2016
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hiroyuki Nagai, Nirasaki, JP;

Peng Chang, Miyagi, JP;

Kenji Matsumoto, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 21/3205 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); C23C 16/06 (2006.01); C23C 16/56 (2006.01); H01L 23/528 (2006.01); C23C 14/02 (2006.01); C23C 14/04 (2006.01); C23C 14/16 (2006.01); C23C 16/04 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); C23C 14/025 (2013.01); C23C 14/046 (2013.01); C23C 14/165 (2013.01); C23C 14/34 (2013.01); C23C 14/5806 (2013.01); C23C 16/045 (2013.01); C23C 16/06 (2013.01); C23C 16/56 (2013.01); H01L 21/28 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 21/76843 (2013.01); H01L 21/76853 (2013.01); H01L 21/76876 (2013.01); H01L 21/76883 (2013.01); H01L 23/5283 (2013.01); H01L 23/532 (2013.01); H01L 23/53238 (2013.01); H01L 23/53228 (2013.01);
Abstract

A method of forming, on a substrate having on a surface thereof a film having a trench of a preset pattern and a via at a bottom of the trench, a Cu wiring by burying Cu or Cu alloy in the trench and the via includes forming a barrier film (process); forming, on a surface of the barrier film, a wetting target layer of Ru or the like (process); forming, on a surface of the wetting target layer, a Cu-based seed film by PVD (process); filling the via by heating the substrate and flowing the Cu-based seed film into the via (process); and forming, on the substrate surface, a Cu-based film made of the Cu or Cu alloy by PVD under a condition where the Cu-based film is flown on the wetting target layer to bury the Cu-based film in the trench (process).


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