The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Sep. 18, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76825 (2013.01); H01L 21/3105 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming a low-k dielectric layer over a substrate and depositing a cap layer over the low-k dielectric layer. A treatment process is performed to the cap layer. After the treatment process to the cap layer is performed, the low-k dielectric layer is etched to form a plurality of trenches using the cap layer as an etching mask.