The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

May. 22, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazuya Dobashi, Yamanashi, JP;

Nobuyuki Takahashi, Tokyo, JP;

Tatsuya Suzuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B08B 5/00 (2006.01); B08B 7/00 (2006.01); G03F 7/42 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); B08B 5/00 (2013.01); B08B 7/0035 (2013.01); G03F 7/42 (2013.01); G03F 7/427 (2013.01); H01L 21/0276 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/67196 (2013.01); H01L 21/67201 (2013.01); H01L 21/67207 (2013.01);
Abstract

Disclosed is a substrate cleaning method. In this substrate cleaning method, a step (step) is performed wherein a removal target film and located above a processing target film is patterned; after step, a step (step) is performed wherein the patterned removal target film is used as an etching mask to perform anisotropic etching on the processing target film; after step, a step (step) is performed wherein the remaining removal target film on the processing target film is subjected to gas chemical etching; and after step, a step (step) is performed wherein a target substrate, which includes the surface of the processing target film, is irradiated with gas clusters, thereby cleaning the surface of the processing target film by removing non-reactive or non-volatile residues remaining on the surface of the processing target film.


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