The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Mar. 16, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Kuoyuan (Peter) Hsu, San Jose, CA (US);
Jacklyn Chang, San Roman, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTUING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 7/22 (2006.01); G11C 7/14 (2006.01); G11C 29/50 (2006.01); G11C 7/12 (2006.01); G11C 11/404 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 7/227 (2013.01); G11C 7/14 (2013.01); G11C 29/50016 (2013.01); G11C 7/12 (2013.01); G11C 11/4045 (2013.01); G11C 11/4094 (2013.01);
Abstract
A method of operating a tracking circuit of a memory device includes charging a node of the tracking circuit to a first predetermined voltage level, the first node being electrically coupled with a first load device. A first plurality of tracking cell transistors are activated to discharge the first node toward a second predetermined voltage level. A reset signal is generated based on a signal at the first node. The reset signal may correspond to a waiting period for reading a memory cell of the memory device.