The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jan. 04, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Li-Cheng Chu, Taipei, TW;
Ping-Yin Liu, Yonghe, TW;
Xin-Hua Huang, Xihu Township, TW;
Yuan-Chih Hsieh, Hsin-Chu, TW;
Lan-Lin Chao, Sindian, TW;
Chun-Wen Cheng, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure may include a first device having first surface with a first bonding layer formed thereon and a second device having a first surface with a second bonding layer formed thereon. The first bonding layer may provide an electrically conductive path to at least one electrical device in the first device. The second bonding layer may provide an electrically conductive path to at least one electrical device in the second device. One of the first or the second devices may include MEMS electrical devices. The first and/or the second bonding layers may be formed of a getter material, which may provide absorption for outgassing.