The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jul. 13, 2017
Globalfoundries Inc., Grand Cayman, KY;
Elliot John Smith, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Nigel Chan, Dresden, DE;
Sven Beyer, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method includes forming a first material stack above a first transistor region, a second transistor region, and a dummy gate region of a semiconductor structure, the first material stack including a high-k material layer and a workfunction adjustment metal layer. The first material stack is patterned to remove a first portion of the first material stack from above the dummy gate region while leaving second portions of the first material stack above the first and second transistor regions. A gate electrode stack is formed above the first and second transistor regions and above the dummy gate region, and the gate electrode stack and the remaining second portions of the first material stack are patterned to form a first gate structure above the first transistor region, a second gate structure above the second transistor region, and a dummy gate structure above the dummy gate region.