The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Apr. 04, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Yu Ma, Taitung, TW;

Chia-Hui Chen, Hsinchu, TW;

Yi-Ting Wang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/93 (2006.01); H01L 27/02 (2006.01); G06F 17/50 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); G06F 17/5072 (2013.01); G06F 17/5081 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 27/0682 (2013.01); H01L 29/93 (2013.01); H01L 27/0802 (2013.01);
Abstract

A method includes determining an active region pattern density of a first region of an integrated circuit layout based on a total area of each active region in the first region and an area of the first region. The method includes determining an active region pattern density of a second region of the integrated circuit layout based on a total area of each active region in the second region and an area of the second region. The method includes determining an active region pattern density gradient between the first region to the second region. The method includes determining whether the first region or the second region includes a resistive device. The method includes modifying a portion of the resistive device to include an incremental resistor in response to the first region or the second region including the resistive device.


Find Patent Forward Citations

Loading…