The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Jul. 31, 2017
Micron Technology, Inc., Boise, ID (US);
Gloria Yang, Higashihiroshima, JP;
Suraj J. Mathew, Boise, ID (US);
Raghunath Singanamalla, Boise, ID (US);
Vinay Nair, Boise, ID (US);
Scott J. Derner, Boise, ID (US);
Michael Amiel Shore, Boise, ID (US);
Brent Keeth, Boise, ID (US);
Fatma Arzum Simsek-Ege, Boise, ID (US);
Diem Thy N. Tran, Garden City, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include a memory cell having first and second transistors, and a capacitor vertically displaced relative to the first and second transistors. The capacitor has a first node electrically coupled with a source/drain region of the first transistor, a second node electrically coupled with a source/drain region of the second transistor, and capacitor dielectric material between the first and second nodes. Some embodiments include a memory cell having first and second transistors vertically displaced relative to one another, and a capacitor between the first and second transistors. The capacitor has a first node electrically coupled with a source/drain region of the first transistor, a second node electrically coupled with a source/drain region of the second transistor, and capacitor dielectric material between the first and second nodes.