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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10157917 B1

PDFFull Text
Date of Patent:
Dec. 18, 2018

Filed:

Dec. 18, 2015

Semiconductor device

Applicant:

Samsung Electronics Co., Ltd, Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung-Gun You, Ansan-si, KR;

Se-Wan Park, Seoul, KR;

Baik-Min Sung, Seoul, KR;

Myung-Yoon Um, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Ward and Smith, P.A.

Primary Examiner:

Alexander Ghyka

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 29/0657 (2013.01); H01L 29/42356 (2013.01); H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 27/0207 (2013.01); H01L 27/1104 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.

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