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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10157777 B1

PDFFull Text
Date of Patent:
Dec. 18, 2018

Filed:

May. 12, 2016

Air gap over transistor gate and related method

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Zhong-Xiang He, Essex Junction, VT (US);

Mark D. Jaffe, Shelburne, VT (US);

Randy L. Wolf, Essex Junction, VT (US);

Alvin J. Joseph, Williston, VT (US);

Brett T. Cucci, Essex Junction, VT (US);

Anthony K. Stamper, Burlington, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

David Cain

Hoffman Warnick LLC

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/84 (2006.01); H01L 23/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/02271 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76805 (2013.01); H01L 21/76829 (2013.01); H01L 21/76895 (2013.01); H01L 21/84 (2013.01); H01L 23/66 (2013.01); H01L 29/78654 (2013.01);
Abstract

A semiconductor device may include a transistor gate in a device layer; an interconnect layer over the device layer; and an air gap extending through the interconnect layer to contact an upper surface of the transistor gate. The air gap provides a mechanism to reduce both on-resistance and off-capacitance for applications using SOI substrates such as radio frequency switches.

Find Patent Forward Citations

He, Zhong-Xiang. (2018). Air gap over transistor gate and related method (U.S. Patent No. 10157777). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10157777

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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