The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Apr. 10, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Hao Chen, Hsinchu, TW;
Jyu-Horng Shieh, Hsin-Chu, TW;
Ming-Chung Liang, Hsin-chu, TW;
Shu-Huei Suen, Hsinchu County, TW;
Wen-Yen Chen, HsinChu County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
In a pattern forming method, a stacked structure, including a bottom layer, a middle layer and a first mask layer, is formed. The middle layer includes a first cap layer, an intermediate layer and a second cap layer. The first mask layer is patterned by using a first resist pattern as an etching mask. The second cap layer is patterned by using the patterned first mask layer as an etching mask. A second mask layer is formed over the patterned second cap layer, and is patterned by using a second resist pattern as an etching mask. The second cap layer is patterned by using the patterned second mask layer as an etching mask. The intermediate layer and the first cap layer are patterned by using the patterned second cap layer as an etching mask. The bottom layer is patterned by using the patterned first cap layer as an etching mask.