The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Jul. 25, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Carsten K. Peters, Dresden, DE;

Peter Baars, Dresden, DE;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 23/535 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7681 (2013.01); H01L 21/7684 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 23/528 (2013.01); H01L 23/5221 (2013.01); H01L 23/535 (2013.01); H01L 23/53228 (2013.01); H01L 23/53266 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/7838 (2013.01); H01L 21/76816 (2013.01); H01L 23/485 (2013.01); H01L 23/5226 (2013.01); H01L 2221/1036 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a contact scheme for landing on different contact area levels of a semiconductor structure and methods of manufacture. The structure includes a first contact at a first level of the structure; a jumper contact at a second, upper level of the structure; an etch stop layer having an opening over the first contact and partially encapsulating the jumper contact with an opening exposing the jumper contact; and contacts in electrical contact with the first contact at the first level and the jumper contact at the second, upper level, through the openings.


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