The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Apr. 12, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Yu Chao Lin, Hsinchu, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Chun-Hung Lee, Hsinchu, TW;
Yu-Lung Yang, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
An integrated circuit manufacturing method includes forming mandrel patterns over a patterning layer of a substrate; and forming a spacer layer over the patterning layer, over the mandrel patterns, and onto sidewalls of the mandrel patterns. The method further includes trimming the spacer layer using a dry etching technique such that a space between adjacent sidewalls of the spacer layer substantially matches a dimension of the mandrel patterns along a pattern width direction. The method further includes etching the spacer layer to expose the mandrel patterns and the patterning layer, resulting in a patterned spacer layer on the sidewalls of the mandrel patterns. After the trimming of the spacer layer and the etching of the spacer layer, the method further includes removing the mandrel patterns. The method further includes transferring a pattern of the patterned spacer layer to the patterning layer.