The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Jun. 08, 2016
Applicant:

Applied Materials Israel Ltd., Rehovot, IL;

Inventors:

Alon Litman, Ness Ziona, IL;

Nir Ben-David Dodzin, Hod-Hasharon, IL;

Albert Karabekov, Ashdod, IL;

Alex Goldenshtein, Ness Ziona, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/86 (2012.01); H01J 37/28 (2006.01); G03F 1/62 (2012.01); G21K 1/06 (2006.01);
U.S. Cl.
CPC ...
G03F 1/86 (2013.01); G03F 1/62 (2013.01); H01J 37/28 (2013.01); G21K 1/062 (2013.01); H01J 2237/164 (2013.01); H01J 2237/2002 (2013.01); H01J 2237/244 (2013.01); H01J 2237/2449 (2013.01); H01J 2237/2809 (2013.01); H01J 2237/2817 (2013.01);
Abstract

A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.


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