The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jun. 09, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chun-Hao Lin, Kaohsiung, TW;
Hsin-Yu Chen, Nantou County, TW;
Chun-Tsen Lu, Tainan, TW;
Shou-Wei Hsieh, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02233 (2013.01); H01L 21/02269 (2013.01); H01L 21/823431 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a shallow trench isolation (STI) around the first fin-shaped structure; forming a first oxide layer on the first fin-shaped structure; and then forming a second oxide layer on the first oxide layer and the STI.