The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2018
Filed:
Jan. 11, 2018
Applicants:
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Inventors:
Feng-Yi Chang, Tainan, TW;
Fu-Che Lee, Taichung, TW;
Ming-Feng Kuo, Tainan, TW;
Chien-Cheng Tsai, Kaohsiung, TW;
Assignees:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/31116 (2013.01); H01L 21/0276 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/32139 (2013.01);
Abstract
The present invention pertains to a patterning method. By taking advantage of the etching loading effect due to different pattern densities in the memory cell region and the peripheral region, the first hard mask is not masked when anisotropically etching the first hard mask within the memory cell region.