The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Jul. 31, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/76232 (2013.01); H01L 29/0653 (2013.01); H01L 29/7851 (2013.01);
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first fin structure over a semiconductor substrate. The semiconductor device structure also includes a second fin structure over the semiconductor substrate. The second fin structure has a lower height than that of the first fin structure. The second fin structure includes a first sidewall and a second sidewall, and the first sidewall and the second sidewall surround a recess over the second fin structure.