The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
May. 17, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/481 (2013.01); H01L 23/5225 (2013.01); H01L 23/53295 (2013.01); H01L 23/60 (2013.01); H01L 25/50 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06537 (2013.01); H01L 2225/06544 (2013.01);
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first integrated circuit die, a second integrated circuit die coupled to the first integrated circuit die, and a through-via coupled between a first conductive feature of the first integrated circuit die and second conductive feature of the second integrated circuit die. A conductive shield is disposed around a portion of the through-via.