The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2018

Filed:

Sep. 22, 2015
Applicant:

Freescale Semiconductor, Inc., Austin, TX (US);

Inventors:

Navas Khan Oratti Kalandar, Austin, TX (US);

Nishant Lakhera, Austin, TX (US);

Akhilesh K. Singh, Austin, TX (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 21/304 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/3043 (2013.01); H01L 21/561 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 24/11 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/81191 (2013.01);
Abstract

A method of processing a semiconductor wafer includes forming a plurality of die in the semiconductor wafer. The semiconductor wafer has a first brittleness. The top surface the semiconductor wafer undergoes grinding to leave an inner planar surface and a rim, wherein the rim extends above the inner planar surface and around a perimeter of the grinded semiconductor wafer. The first encapsulant material is formed over the inner planar surface and contained within the rim to form a composite semiconductor wafer that has a second brittleness less than the first brittleness. The composite semiconductor wafer is singulated into the plurality of die in which each die of the plurality of die is a composite structure die.


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