The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2018
Filed:
Jun. 30, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Lee Chen, Cedar Park, TX (US);
Audunn Ludviksson, Seattle, WA (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01L 21/02063 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 21/32135 (2013.01); H01L 21/76807 (2013.01); H01L 21/76814 (2013.01); H01L 21/76838 (2013.01); H01L 21/76849 (2013.01); H01L 21/76879 (2013.01); H01L 23/53238 (2013.01);
Abstract
A method and apparatus for dry etching pure Cu and Cu-containing layers for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy to oxidize the Cu and Cu-containing layers, and organic compound etching reagents that react with the oxidized Cu to form volatile Cu-containing etch products. The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist.