The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
May. 26, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shih-Lu Hsu, Tainan, TW;
Ping-Pang Hsieh, Tainan, TW;
Yu-Chu Lin, Tainan, TW;
Jyun-Guan Jhou, Taoyuan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes performing a first plasma etching process on a substrate to form a first trench in the substrate. The method includes removing a second portion of the substrate under the bottom surface to form a second trench under and connected to the first trench. The second trench surrounds a third portion of the substrate under the first portion. The third portion has a first sidewall. The first sidewall is inclined relative to the top surface at a second angle, and the first angle is greater than the second angle. The method includes forming an isolation structure in the first trench and the second trench. The method includes forming a gate insulating layer over the top surface and the first inclined surface. The method includes forming a gate over the gate insulating layer and the isolation structure.