The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Dec. 18, 2017
United Microelectronics Corp., Hsinchu, TW;
Ming-Hua Tsai, New Taipei, TW;
Jung Han, New Taipei, TW;
Chin-Chia Kuo, Tainan, TW;
Wen-Fang Lee, Hsinchu, TW;
Chih-Chung Wang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor structure includes a HV NMOS structure. The HV NMOS structure includes a source region, a drain region, a channel region, a gate dielectric, and a gate electrode. The source region and the drain region are separated from each other. The channel region is disposed between the source region and the drain region. The channel region has a channel direction from the source region toward the drain region. The gate dielectric is disposed on the channel region and on portions of the source region and the drain region. The gate electrode is disposed on the gate dielectric. The gate electrode includes a first portion of n-type doping and two second portions of p-type doping. The two second portions are disposed at two sides of the first portion. The two second portions have an extending direction perpendicular to the channel direction.