The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

Feb. 16, 2017
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Yuan-Fu Sung, Kaohsiung, TW;

Shin-Hua Chao, Kaohsiung, TW;

Ming-Chi Liu, Kaohsiung, TW;

Hung-Sheng Chen, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 23/3114 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49866 (2013.01); H01L 23/49894 (2013.01); H01L 24/16 (2013.01); H01L 2224/16235 (2013.01);
Abstract

A semiconductor package includes: a passivation layer having a first surface and a second surface opposite to the first surface, the passivation layer defining a through hole extending from the first surface to the second surface, the through hole being further defined by a first sidewall and a second sidewall of the passivation layer; a first conductive layer on the first surface of the passivation layer and the first sidewall; a second conductive layer on the second surface of the passivation layer and the second sidewall; and a third conductive layer between the first conductive layer and the second conductive layer.


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