The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Jan. 12, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, CN;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, Fujian Province, unknown;
Abstract
A method of improving micro-loading effect when recess etching a tungsten layer. A substrate having trenches thereon is provided. A tungsten layer is deposited on the substrate and in the trenches. A planarization process is performed to form a planarization layer on the tungsten layer. A first etching process is performed to etch the planarization layer and the tungsten layer with an etch selectivity of planarization layer:tungsten layer=1:1 until the planarization layer is completely removed. A second etching process is performed to etch the remainder of the tungsten layer to recess the tungsten layer within the trenches.