The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Aug. 23, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Muneyuki Imai, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/02115 (2013.01); H01L 21/02271 (2013.01); H01L 21/31144 (2013.01); H01L 21/67207 (2013.01); H01L 21/67742 (2013.01); H01L 21/76816 (2013.01); H01L 21/0217 (2013.01); H01L 21/0223 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02255 (2013.01); H01L 21/02532 (2013.01); H01L 21/67017 (2013.01); H01L 21/67173 (2013.01); H01L 21/67201 (2013.01); H01L 21/67706 (2013.01);
Abstract
There is provided a substrate processing method performed on a substrate having a recess formed in a surface thereof, a first silicon-containing film formed on a bottom surface of the recess, a second silicon-containing film formed on both sides of the recess, the method including: depositing a carbon-based deposit on the surface of the substrate; removing the first silicon-containing film by performing a COR (Chemical Oxide Removal) process in which a silicon-containing film is modified to a reaction product using a processing gas, on the substrate; and removing the deposited carbon-based deposit.