The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2018

Filed:

May. 24, 2017
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Zhi Qiang Mu, Singapore, SG;

Chow Yee Lim, Singapore, SG;

Hui Yang, Singapore, SG;

Yong Bin Fan, Singapore, SG;

Jianjun Yang, Singapore, SG;

Chih-Chien Chang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 21/02071 (2013.01); H01L 21/02074 (2013.01); H01L 29/4916 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01);
Abstract

A manufacturing method of a semiconductor structure includes the following steps. A first polysilicon layer is formed on a substrate. A planarization process to the first polysilicon layer is performed. A first etching back process to the first polysilicon layer is performed after the planarization process. A second etching back process to the first polysilicon layer is performed after the first etching back process. A first wet clean process to the first polysilicon layer is performed after the first etching back process and before the second etching back process.


Find Patent Forward Citations

Loading…