The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2018
Filed:
Nov. 24, 2015
Fabricating method of a semiconductor device with a high-k dielectric layer having a u-shape profile
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chin-Cheng Chien, Tainan, TW;
Chun-Yuan Wu, Yun-Lin County, TW;
Chih-Chien Liu, Taipei, TW;
Chin-Fu Lin, Tainan, TW;
Teng-Chun Tsai, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28158 (2013.01); H01L 21/28114 (2013.01); H01L 21/28185 (2013.01); H01L 29/42368 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 29/49 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/51 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.